Integrating device

ABSTRACT

An integrated device using an element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape is provided. A plurality of elements in which a circuit element is formed continuously or intermittently in the longitudinal direction, or a plurality of elements in which a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction are bundled, twisted, woven or knitted, joined, formed in combination or formed in the non-woven state.

FIELD OF THE INVENTION

The present invention relates to an integrated device using a lineelement.

BACKGROUND ART

Nowadays, various types of devices using integrated circuits haveprevailed in a wide range, and efforts are being made for further highintegration and densification. One of those efforts is athree-dimensional integration technique.

Any of those devices, however, has a basic constitution of rigid boardssuch as wafers. Due to such a basic constitution with the rigid boards,its manufacturing method is restrained, and a degree of integration hasa limitation. Moreover, the shape of devices is limited.

Also, electrically conductive fibers in which the surface of cotton orsilk is plated or surrounded by an electrically conductive material suchas gold or copper are known.

However, such a technique that a circuit element is formed in a singlefilament is not known. Also, even though it is an electricallyconductive fiber, the filament itself is basically constituted withcotton or silk, and the filament itself is provided at its center.

The present invention has an object to provide an integrated devicewhich is not limited by the shape but has flexibility and is capable offorming various devices in an optional shape.

DESCRIPTION OF THE INVENTION

The present invention is an integrated device characterized by that aplurality of line elements in which a circuit element is formedcontinuously or intermittently in the longitudinal direction arebundled, twisted, woven or knitted, joined, formed in combination orformed in the non-woven state.

The present invention is an integrated device characterized by that aplurality of line elements in which a cross section having a pluralityof areas forming a circuit is formed continuously or intermittently inthe longitudinal direction are bundled, twisted, woven or knitted,joined, formed in combination or formed in the non-woven state.

The present invention is a fabric body characterized by being formed byweaving or knitting a plurality of line elements in which a circuitelement is formed continuously or intermittently in the longitudinaldirection.

The present invention is a fabric body characterized by being formed byweaving or knitting a plurality of line elements in which a crosssection having a plurality of areas forming a circuit is formedcontinuously or intermittently in the longitudinal direction.

The present invention is clothes characterized by production by weavingor knitting a plurality of line elements in which a cross section havinga plurality of areas forming a circuit is formed continuously orintermittently in the longitudinal direction.

The present invention is clothes characterized by production by weavingor knitting a plurality of line elements in which a cross section havinga plurality of areas forming a circuit is formed continuously orintermittently in the longitudinal direction.

Here, as a line element, the followings are preferable.

Said line element is an energy conversion element.

Said line element is an electronic circuit element or an optical circuitelement.

Said line element is a semiconductor element.

Said line element is a diode, transistor or thyristor.

Said line element is a light emitting diode, semiconductor laser orlight receiving device.

Said line element is DRAM, SRAM, flash memory or other memories.

Said line element is a photoelectromotive force element.

Said line element is an image sensor element or secondary batteryelement.

The vertical sectional shape is a shape of circle, polygon, star,crescent, petal, letter or other optional shapes.

Line sides have a plurality of exposed portions.

The whole or a part of said line element is formed by extrusion. Thewhole or a part of said line element is formed by extrusion and then,drawing.

Said line element is formed by extrusion and then, expansion.

It is formed into the ring or spiral state after the above expansion.

Said ring is a multiple ring.

Said multiple ring is made of different materials.

A part of the ring or spiral is an exposed portion.

Another material is filled in a part or the whole of a gap of said ringor spiral.

An outer diameter is 10 mm or less.

An outer diameter is 1 mm or less.

An outer diameter is 1 μm or less.

An aspect ratio is 10 or more.

An aspect ratio is 100 or more. It is preferable to be 1000 or more inthe filament state.

A gate electrode area, an insulating area, a source and drain area and asemiconductor area are formed in a cross section.

A gate electrode area is provided at the center and an insulating area,a source and drain area and a semiconductor area are formed sequentiallyon its outside.

A hollow area or an insulating area is provided at the center, asemiconductor area is provided on its outside, a source and drain areais provided in the semiconductor area so that a part of it is exposed tothe outside, and an insulating area and a gate electrode area areprovided on its outside.

At least an area having pn junction or pin junction is formed in a crosssection.

A semiconductor area forming said circuit is comprised of an organicsemiconductor material.

Said organic semiconductor material is polytiophene, polyphenylene.

An electrically conductive area forming said circuit is made of anelectrically conductive polymer.

Said electrically conductive polymer is polyacetylene, polyphenylenevinylene, polypyrrole.

Different circuit elements are formed at optional positions in thelongitudinal direction.

Circuit element separation areas are formed at optional positions in thelongitudinal direction.

Portions with different outer diameter shapes are provided at optionalpositions in the longitudinal direction.

A part of an area is comprised of an electrically conductive polymer andan orientation rate in the longitudinal direction of a molecular chainis 50% or more.

A part of an area is comprised of an electrically conductive polymer andan orientation rate in the longitudinal direction of a molecular chainis 70% or more.

A part of an area is comprised of an electrically conductive polymer andan orientation rate in the circumferential direction of a molecularchain is 50% or more.

A part of an area is comprised of an electrically conductive polymer andan orientation rate in the circumferential direction of a molecularchain is 70% or more.

A line element is preferably manufactured by the following methods.

A material forming an area forming a circuit element is melted, fused orgelled and said material is extruded into a desired shape in the linestate.

A part of said area is formed by an electrically conductive polymer.

After said extrusion, drawing is further applied.

After said extrusion, expansion is further applied.

After said drawing, expansion is further applied.

After said expansion, formation is conducted into the ring state.

A method of producing a line element laminated in multiple layers fromthe center to the outside, wherein a center layer is extruded to form afilament state to have a primary filament and then, while running saidprimary filament, a material of an outer layer is injected to thesurface to form outer layers sequentially.

At extrusion of the electrically conductive polymer, a differencebetween a running speed and an injection speed is set at 20 m/sec ormore.

(Circuit Element)

The circuit element here includes an energy conversion element, forexample. The energy conversion element is an element which convertslight energy to electric energy or changes electric energy to lightenergy. Electronic circuit, magnetic circuit and optical circuitelements are included. The circuit element is an element in which energyconversion is performed and it is different from optical fibers whichsimply transmits a signal.

As the circuit element, an electronic circuit element or an opticalcircuit element are examples. To be concrete, it is a semiconductorelement, for example.

When classified according to difference in the conventional processtechnologies, discrete (discrete semiconductor), optical semiconductor,memory, etc. are examples.

To be more concrete, there are diode, transistor (bipolar transistor,FET, insulated gate transistor), thyristor, etc. as discrete. Opticalsemiconductors include light emitting diode, semiconductor laser, lightemitting device (photodiode, phototransistor, image sensor) areexamples. As memory, DRAM, flash memory, SRAM, etc. are included.

(Formation of Circuit Element)

In the present invention, the circuit element is formed continuously orintermittently in the longitudinal direction.

That is, a plurality of areas are provided in a perpendicular crosssection in the longitudinal direction, and said plurality of areas arearranged so as to form a single circuit element. And the cross sectioncontinues in the filament state continuously or intermittently in thelongitudinal direction.

In the case of an NPN bipolar transistor, for example, it is comprisedof three areas: an emitter N area, a base P area and a collector P area.Thus, these 3 areas are arranged with a required inter-area junction inthe cross section.

For the arrangement, there can be a method for arranging each of theareas in order from the center of formation in the concentric state, forexample. That is, it is only to form the emitter area, base area andcollector area sequentially from the center. It is needless to say thatanother arrangement can be made, and the topologically same arrangementmay be used as appropriate.

An electrode to be connected to each of the areas may be connected toeach of the areas from an end face of a filament element. Or it can beembedded in each area in advance. That is, when each of thesemiconductor areas is arranged in the above concentric state, anemitter electrode is provided at the center of the emitter area, a baseelectrode in the base area and a collector electrode on the outercircumference of the collector area continuously in the longitudinaldirection as each of the semiconductor area. The base electrode can bedivided for arrangement.

The above NPN bipolar transistor can be integrally formed by extrusion,which will be described later.

The NPN transistor was used as an example in the above, but othercircuit elements may be also formed by arranging a plurality of areas inthe cross section with required joint and forming the cross sectionscontinuously in the longitudinal direction by extrusion, for example.

(Continuous Formation, Intermittent Formation)

The circuit element has, when formed continuously, a cross section inthe same shape anywhere such as a candy-bar with the same cross sectionover the length.

The same circuit element may be formed with same elements continuouslyin the longitudinal direction or intermittently.

(Linear)

The outer diameter of the line element in the present invention ispreferably 10 mm or less and more preferably, 5 mm or less. 1 mm or lessis more preferable, and 10 μm or less is furthermore preferable. It ispossible to make it 1 μm or less or further 0.1 μm or less by applyingdrawing processing. In order to weave the line element into a fabricstate, it is more preferable if the outer diameter is smaller.

If a super-fine filament with the outer diameter of 1 μm or less is tobe discharged from a hole of a mold for formation, there can be cloggingof the hole or breakage of the filament. In these cases, a linear objectof each area is formed first. Then, supposing this linear object as anisland, and many islands are formed, and their periphery (sea) issurrounded by a soluble object. And they are bundled by a funnel shapedmouthpiece and made to discharge as a single linear object from a smallmouth. By increasing the island component to make the sea componentsmall, an extremely fine line element can be made.

As another method, a thick line element is made once and then, drawn inthe longitudinal direction. Also, it is possible to realize superfineness by loading a fused material on a jet stream for melt blow.

An aspect ratio can take an optional value by extrusion. In the case ofspinning, 1000 or more in the filament state is preferable. 100000 ormore is possible, for example. In the case of use after cutting, it canbe a small unit of line element of 10 to 10000, 10 or less, 1 or less orfurther 0.1 or less.

(Intermittent Formation)

If the same element is to be formed intermittently, elements adjoiningin the longitudinal direction can be different. It can be formed in thelongitudinal direction in order of, MOSFET (1), separation layer betweenelements (1), MOSFET (2), separation layer between elements (2) . . .MOSFET (n), separation layer between elements (n).

In this case, the length of MOSFET (k) (K=1˜n) and other MOSFET can bethe same or different. The length can be selected as appropriateaccording to the characteristics of a desired circuit element. The sameapplies to the length of the separation layer between elements.

It is needless to say that another layer may be interposed betweenMOSFET and the separation layer between elements.

In the above explanation, MOSFET was used as an example, but in forminganother element, a layer required for application of another element isinserted intermittently.

(Cross Sectional Shape)

The cross sectional shape of the line element is not particularlylimited. It can be a circle, polygon, star, crescent, petal or any othershapes, for example. It can be a polygon with plural vertical angleswhich are acute.

Also, the cross section of each area can be optional. That is, in thecase of a structure shown in FIG. 1, for example, a gate electrode maybe in the shape of a star, while the outer shape of the line element canbe circular. If a contact surface with the adjacent layer is to be madelarge depending on the element, it is preferable to have a polygon shapewith acute vertex angles.

A desired shape of the cross section can be easily realized by havingthe desired shape of an extrusion die.

If the cross section of the outermost layer is in the shape of a star ora shape with acute vertex angles, another optional material can beembedded by dipping into a space between the vertex angles afterextrusion, for example, and the characteristics of the element can bechanged depending on application of the element.

Also, by engaging a line element with the recess shaped cross sectionwith a line element with the projecting shaped cross section, connectionbetween line elements can be made effectively.

If doping of impurities into a semiconductor layer is desired, theimpurities can be contained in a fusion material, but it is possible topass it through a vacuum chamber in the line state after extrusion anddope the impurities in the vacuum chamber by ion implantation, forexample. If the semiconductor layer is formed not on the outermost layerbut inside, ion can be implanted only into the semiconductor layer,which is an inner layer, by controlling ion radiation energy.

(Manufacture Example, Post-Processing Formation)

The above manufacture example is an example of integral forming of anelement having a plurality of layers by extrusion, but it can be alsoformed by forming a base part of the element in the line state byextrusion and coating the base part after that by an appropriate method.

(Raw Material)

As a material for the electrode, semiconductor layers, etc., it ispreferable to use an electrically conductive polymer. They can bepolyacetylene, polyacene, (oligo acene), polythiazyl, polytiophene, poly(3-alkyl tiophene), oligo tiophene, poly pyrrole, polyaniline,polyphenylene, etc. An electrode or a semiconductor layer may beselected from them, considering conductivity and so on.

As a material for semiconductor, polyparaphenylene, polytiophene, poly(3-methyltiophene) are used suitably.

Also, as a source/drain material, those with dopant mixed in the abovesemiconductor material can be used. To have n-type, alkali metal (Na, K,Ca) may be mixed. AsF₅/AsF₃ or ClO₄ ⁻ is used as a dopant in some cases.

As an insulating material, a general resin material can be used. Also,an inorganic material such as SiO₂ can be used.

In the case of a line element in the structure having a semiconductorarea or an electrically conductive area at the center, the center areacan be constituted by an amorphous material (metal material such asaluminum, copper, etc.; semiconductor material such as silicone). Aline-state amorphous material is inserted into the stop part of a die tomake the line-state amorphous material run, and its outer circumferencecan be coated by the other desired areas by injection.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a line element used in anintegrated device according to a preferred embodiment.

FIG. 2 is a conceptual front view showing a manufacturing device exampleof the line element.

FIG. 3 is a front view showing an extruding device used for manufactureof the line element and a plan view of a die.

FIG. 4 is a view showing a preferred embodiment of the line element.

FIG. 5 is a plan view of a die used for manufacture of the line element.

FIG. 6 is a cross sectional view showing a manufacture process exampleof the line element.

FIG. 7 is a view showing a manufacture process example of the lineelement.

FIG. 8 is a view showing a manufacture example of the line element.

FIG. 9 is a perspective view showing the line element used in theintegrated device according to a preferred embodiment.

FIG. 10 is a cross sectional view showing the line element used in theintegrated device according to a preferred embodiment.

FIG. 11 is a process diagram showing a manufacture example of the lineelement.

FIG. 12 is a perspective view showing a manufacture example of the lineelement.

FIG. 13 is a view showing an integrated circuit device according to apreferred embodiment.

FIG. 14 is a view showing an integrated circuit device according to apreferred embodiment.

FIG. 15 is a view showing an integrated circuit device according to apreferred embodiment.

FIG. 16 is a view showing an integrated circuit device according to apreferred embodiment.

BEST MODE FOR CARRYING-OUT OF THE INVENTION EXAMPLE 1

FIG. 1 shows a line element used in an integrated device according to anexample of the present invention.

6 is a line element and indicates MOSFET in this example.

In this element, in its cross section, a gate electrode area 1 isprovided at the center, outside of which are formed an insulating area2, a source area 4, a drain area 3 and a semiconductor area 5sequentially.

In the meantime, in FIG. 2, a general constitution of an extrudingdevice for forming such a line element is shown.

An extruding device 20 has raw material containers 21, 22 and 23 forholding a material for constituting a plurality of areas in the meltedstate, fused state or gel state. In the example shown in FIG. 2, threeraw material containers are shown, but they can be provided asappropriate according to the constitution of the line element to bemanufactured.

The raw material in the raw material container 23 is fed to a die 24. Inthe die 24, injection holes according to the cross section of the lineelement to be manufactured are formed. Linear objects injected from theinjection holes are wound around a roller 25 or fed in the line state tothe next process when necessary.

In the case of manufacture of the line element in the structure shown inFIG. 1, a constitution shown in FIG. 3 is used.

In the raw material containers, a gate material 30, an insulatingmaterial 31, a source/drain material 32 and a semiconductor material 34are held in the respective containers in the melted, fused or gel state.In the meantime, in the die 24, holes are formed in communication withthe respective raw material containers.

That is, at the center part, a plurality of holes 30 a for injecting thegate material 30 are formed. On its outer periphery, a plurality ofholes 31 a for injecting the insulating material 31 are formed. Andfurther on its outer periphery, a plurality of holes are formed, andonly part of these plural holes 32 a and 33 a are in communication withthe source/drain raw material container 32. The other holes 34 a are incommunication with the semiconductor material container 34.

When, from each of the raw material containers, the raw material in themelted, fused or gel state is injected from the die 24, the raw materialis injected from each of the holes and solidified. By pulling its end,the line element can be formed continuously in the filament state.

The filament-state line element is wound around the roller 25. Or, it isfed in the filament state to the next process when necessary.

As a gate electrode material, an electrically conductive polymer may beused. For example, polyacetylene, polyphenylene vinylene, polypyrrole,etc. are used. Especially, it is preferable to use polyacetylene, sincea line element with smaller outer diameter can be formed.

As a semiconductor material, polyparaphenylene, polytiophene, poly(3-methyltiophene), for example, are preferably used.

As a source/drain material, those with dopant mixed in the abovesemiconductor material may be used. To have an n-type, alkali metal (Na,K, Ca), for example, may be mixed. AsF₅/AsF₃ or ClO₄ ⁻ is used as adopant in some cases.

As an insulating material, a general resin material may be used. Also,an inorganic material such as SiO₂ can be used.

The materials cited above are also used for the line element shown inthe following examples.

In this example, a discharge electrode is connected to the end face ofthe line element. It is needless to say that a discharge port can beprovided on the side at an appropriate location in the longitudinaldirection.

EXAMPLE 2

A line element used in an integrated device according to the example 2is shown in FIG. 4.

In this example, the discharge electrode in the example 1 is provided onthe side of the line element. Discharge parts 41 a, 41 b shown in FIG.4(b) can be provided at desired locations in the longitudinal direction.An interval between the discharge part 41 a and the discharge part 41 bcan be a desired value.

A-A cross section of the discharge part 41 is shown in FIG. 4(a). B-Bcross section in FIG. 4(b) is structure of the end face shown in FIG. 1.

In this example, a source electrode 45 and a drain electrode 46 as thedischarge electrode are connected respectively to a source 4 and a drain4 on the side of the source 4 and the drain 3. Also, a semiconductorlayer 5 and a source electrode 45, a drain electrode 46 are insulated byan insulating layer 47.

In order to have such a structure, a die shown in FIG. 5 is used. Thatis, a hole 40 a for the insulating layer and a hole 41 a for thedischarge electrode are provided on the side of the source/drainmaterial injection ports 33 a, 34 a. The hole 40 a for the insulatinglayer is in communication with a insulating layer material container(not shown), while the hole 41 a for the discharge electrode is incommunication with a discharge electrode material container (not shown).

In this case, first, raw materials are injected only from 30 a, 31 a, 32a, 33 a and 34 a. That is, injection from 40 a and 41 a is turned off.The semiconductor layer material goes over to portions corresponding to40 a, 41 a and is extruded with the cross section shown in theexample 1. At this time, the width of the insulating layer 47, drainelectrode 46 and source electrode 45 are made small. When injection from40 a and 41 a is turned off, the material forming the semiconductorlayer goes over to the portions.

Next, the injection from 40 a, 41 a is turned on. By this, the crosssectional shape is changed and the material is extruded with the crosssection shown in FIG. 5. By changing the time to turn on or off 40 a, 41a as appropriate, the length of the A-A cross section and the B-B crosssection can be adjusted to an optional one.

There is an example in which the cross sectional shape is formedintermittently, and A-A can be another cross sectional shape ormaterial. For example, the A-A portion as a whole can be the insulatinglayer. The other end-face shapes can be also formed by the same method.

If the areas of the drain electrode 45 and the source electrode 46 aremade larger and injection from the hole 41 a for the discharge electrodeis turned off, the material of the semiconductor layer or the materialof the insulating layer does not fully go over, but a portioncorresponding to the source electrode/drain electrode becomes a space.It is only to embed the electrode material in that space afterextrusion.

EXAMPLE 3

The example is shown in FIG. 6.

The cases of integral formation of the line element by extrusion areshown in the examples 1 and 2, but in this example, a part of the lineelement is formed by extrusion, while the other is formed by externalprocessing.

As the line element, the line element shown in the example 2 is used asan example.

First, a filament-state intermediate body is formed by extruding a gateelectrode 1 and an insulating film 2 (FIG. 6(a)).

Next, outside of the insulating film 2 is coated by the semiconductormaterial in the melted, fused or gel state to form a semiconductor layer61 to have a secondary intermediate body (FIG. 6(b)). For such coating,it is only necessary to pass a filament-state intermediate body throughthe semiconductor material in the melted, fused or gel state in a tank.Or, a deposition method or the like can be adopted.

Next, outside of the semiconductor layer 61 is coated by a maskingmaterial 62. Coating of the masking material 61 can also be formed bypassing the secondary intermediate body through the melted, fused orgelled masking material.

Then, a predetermined location of the masking material 62 (locationcorresponding to drain/source) is removed by etching or the like to forman opening 63 (FIG. 6(c)).

Then, while passing the filament-state secondary intermediate bodythrough a decompression chamber, ion implantation is conducted bycontrolling an injection range (FIG. 6(d)).

Then, by passing it through a thermal processing chamber for annealing,the source area and the drain area are formed.

In this way, it is only necessary to combine extrusion and externalprocessing as appropriate according to arrangement or material of anarea to be formed.

EXAMPLE 4

This example shows an example to sequentially form each area in the lineelement shown in FIG. 1.

The procedure is shown in FIG. 7.

First, by a spinning technique, a gate electrode material is injectedfrom the hole of a die a so as to form the gate electrode 1 (FIG. 7(b)).This gate electrode 1 is called as an intermediate filament forconvenience.

Then, as shown in FIG. 7(a), the intermediate filament is insertedthrough the center of a die b, and while having the intermediatefilament run, the insulating film material is injected from a holeformed in the die b so as to form the insulating film 2 (FIG. 7(C)). Aheater is provided on the downstream side of the die b. The filament isheated by this heater as necessary. By heating, it becomes possible toremove a solvent component in the insulating film from the insulatingfilm. It also applies to the following formation of the source/drainlayer, semiconductor layer.

Then, while having the intermediate filament run, the source/drainlayers 3, 4 are formed (FIG. 7(c), (d)). The source area 4 and the drainarea 3 are formed separately on the insulating film 2. This becomespossible by providing a hole only a part of a die c.

Next, while inserting the intermediate filament through the center inthe die and having it run, the semiconductor layer 5 is similarlyformed.

As shown in FIG. 7(f), when a discharge electrode for source/drain is tobe provided on a part in the longitudinal direction, it is onlynecessary to turn off supply of a raw material from a part of aplurality of holes provided on a die d (holes of a portion correspondingto the source/drain electrode). Also, when a hole for discharge is to beprovided over the longitudinal direction, a die d2 as shown in FIG. 7(g)is used to form the semiconductor layer.

EXAMPLE 6

The example 6 is shown in FIG. 8.

This example is an injection example of an electrically conductivepolymer when the electrically conductive polymer is used as a formingmaterial of a semiconductor element.

The example 5 shows an example to form an outer layer on the surface ofthe intermediate filament while inserting the intermediate filamentthrough the die. This example shows a case where this outer layer is theelectrically conductive polymer.

A raw material 82 V₁-V₀ is 20 m/sec or more. Preferably, it is 50 m/sec.More preferably, it is 100 m/sec or more. An upper limit is a speed atwhich the intermediate filament is not cut. The speed at which cuttingoccurs depends on a discharge amount of a material, viscosity of amaterial, an injection temperature, etc., but to be concrete, it is onlynecessary to acquire it in advance by experiments by setting conditionssuch as materials to be used.

To a material injected by setting the injection speed V₀ and the runningspeed V₁ at 20 m/sec or more, acceleration and an external force areapplied. A main direction of the external force is the runningdirection. A molecular chain in the electrically conductive polymer isusually in the twisted state as shown in FIG. 8(c), and its longitudinaldirection is at random. However, when the external force is applied inthe running direction together with the injection, the molecular chainis untwisted as shown in FIG. 8(b) but is oriented horizontally in thelongitudinal direction.

Electron (or hole) moves, as shown in FIG. 8(b), by hopping to amolecular chain at the closest level. Thus, when the molecular chain isoriented in the horizontal direction as shown in FIG. 8(b), hopping ofelectron is extremely easy to occur as compared with the case of randomorientation as in FIG. 8(c).

By applying the external force to the running direction with theinjection, the molecular chain can be oriented as shown in FIG. 8(b).Also, it becomes possible to reduce the distance between the molecularchains.

It is needless to say that this example can naturally be applied toformation of a predetermined area with an electrically conductivepolymer also in the other examples.

By setting the orientation rate of the molecular chain in thelongitudinal direction at 50% or more, movement degree of the electronis increased and the line element with more excellent characteristicscan be provided. A high orientation rate can be also controlled bycontrolling the difference between the injection speed and the runningspeed. Also, it can be controlled by controlling the elongation rate inthe longitudinal direction.

The orientation rate here refers to a proportion multiplied by 100 ofthe number of molecules having an inclination of 0 to ±5° with respectto the longitudinal direction against the total number of molecules.

By setting it at 70% or more, the line element with furthermoreexcellent characteristics can be obtained.

EXAMPLE 7

The line element used in the integrated device according to the example7 is shown in FIG. 9.

The line element in this example has a hollow area or insulating area 70at the center, the semiconductor area 5 on its outside, the source area4 and the drain area 3 in the semiconductor area 5 so that a part of itis exposed to the outside and the gate insulating film area 2 and thegate electrode area 1 on its outside.

A protective layer comprised of an insulating resin may be provided onthe outside of the gate electrode area 1. An appropriate location of theprotective layer may be opened to be a discharge part of the gateelectrode.

In this example, too, a cross section having another shape may beinserted between cross sections shown in FIG. 7 at an optional positionin the longitudinal direction as with the example 2.

In the case of the line element in this example, it is preferable that,after the hollow area 70 and the semiconductor area 5 are formed byextrusion, doping is conducted on the source area 4 and the drain area3, and then, the insulating film area and the gate electrode area 1 arecoated respectively for formation. As the insulating film 2, it ispreferable to use an inorganic material such as SiO₂.

EXAMPLE 8

FIG. 10(a) shows the line element used in the integrated deviceaccording to the example 8.

This example is a line element having a pin structure.

That is, an electrode area 102 is provided at the center, and on itsoutside, an n-layer area 101, an i-layer area 100, a p-layer area 103,an electrode area 104 are formed. In this example, a protective layerarea 105 comprised of a transparent resin or the like is provided on theoutside of the p-layer area 103.

This line element is integrally formed by extruding the electrode area102, the n-layer area 101 and the i-layer area 100.

The p-layer area 103 and the electrode area 104 are formed bypost-application processing such as coating, for example. By usingpost-application processing for the p-layer area 103, the thickness ofthe p-layer area 103 can be reduced. Therefore, if used as aphotoelectromotive force element, it becomes possible to take inincident light from the p-layer 103 efficiently into a depletion layer.

Of course, the electrode area 102, the n-layer area 101, the i-layerarea 100, the p-layer area 103 and the electrode area 104 may beintegrally formed by extrusion.

In FIG. 10(a), the circumferential shape of the i-layer is circular, butit is preferable to have the star shaped. By this, the mating areabetween the p-layer 103 and the i-layer 100 is increased, whereby theconversion efficiency can be improved.

In the example shown in FIG. 10(a), the electrode 104 is provided at apart of the p-layer 103, but it can be formed covering the overalllength.

A p⁺-layer may be provided between the p-layer 103 and the electrode104. By providing a p⁺-layer, ohmic contact between the p-layer 103 andthe electrode 104 becomes easy. Also, electrons tend to flow to thei-layer side more easily.

As the semiconductor material to form the p-layer, the n-layer and thei-layer, an organic semiconductor material is used suitably.Polytiophene, polypyrrol and so on are used, for example. To have thep-type and the n-type, doping may be used as appropriate. Combination ofp-type polypyrrole/n-type polytiophene can be used, too.

The electrically conductive polymer is preferable also as the electrodematerial.

EXAMPLE 9

FIG. 10(b) shows the line element used in the integrated deviceaccording to the example 9.

In the Example 5, the pin structure was formed concentrically, but inthis example, it has a rectangular cross section. A p-layer area 83, ani-layer area 80 and an n-layer area 81 are arranged horizontally. Also,electrodes 82, 83 are formed on the side, respectively.

In this example, the cross section shown in FIG. 10(b) is formedcontinuously in the longitudinal direction.

The line element in this structure can be formed integrally byextrusion.

EXAMPLE 10

In this example, an electrode area is provided at the center, and anarea made of a material in which a p-type material and an n-typematerial are mixed is formed on its outer circumference. Further on itsouter circumference, the electrode area is formed.

That is, in the above example, a diode element in the double-layeredstructure in which the p-layer is joined with the n-layer (or athree-layered structure with an i-layer interposed) is shown. However,this example is a diode element of a single-layered structure comprisedof a material in which the p-type material is mixed with the n-typematerial.

The p-type/n-type mixed material can be obtained by mixing anelectron-donating conductive polymer and an electron acceptingconductive polymer.

When the element area is formed by the p-type/n-type mixed material, asimple structure can be obtained, which is preferable.

EXAMPLE 11

In this example, the line element shown in the above example is furtherdrawn in the longitudinal direction. The drawing method can be atechnique to draw a copper wire or a copper pipe, for example.

By drawing, the diameter can be further reduced. Especially, when anelectrically conductive polymer is used, the molecular chain can be madeparallel in the longitudinal direction, as mentioned above. Moreover, aninterval between the paralleled molecular chains can be reduced. Thus,hopping of electrons can be performed efficiently. As a result, the lineelement with more excellent characteristics can be obtained.

A drawing rate by drawing is preferably 10% or more. 10 to 99% is morepreferable. The drawing rate is 100×(area before drawing—area afterdrawing)/(area before drawing).

The drawing can be repeated several times. In the case of a materialwith a modulus of elasticity which is not so large, it is only necessaryto repeat drawing.

The outer diameter of the line element after drawing is preferably 1 mmor less. 10 μm or less is more preferable. 1 μm or less is furthermorepreferable. 0.1 μm or less is the most preferable.

EXAMPLE 12

FIG. 11 shows the example 12.

In this example, a raw material is formed into the line state with therectangular cross section by extrusion so as to manufacture theintermediate linear extrusion 11 (FIG. 11(a)). It can be extruded toanother cross-sectional shape.

Then, the intermediate line extrusion 111 is expanded in the lateraldirection in the cross section or in the cross-sectional verticaldirection to form an expanded body 112 (FIG. 11(b). In this FIG., anexample of expansion in the lateral direction is shown.

Then, the expanded body 112 is cut to an appropriate number in parallelin the longitudinal direction to produce a plurality of unit expandedbodies 113 a, 113 b, 113 c, 1113 d. They can move on to the next processwithout this cutting.

Then, the unit expanded bodies are processed in an appropriate shape. Inthe example shown in the Fig., they are processed to the ring shape(FIG. 11(d)), spiral shape (FIG. 11(e)), and double ring shape (FIG.11(f)).

Then, an appropriate material is embedded in hollow parts 114 a, 114 b,114 c and 114 d. When the unit expanded body is the semiconductormaterial, the electrode material is embedded. It is needless to say thatembedding can be done not after processing to the ring shape but at thesame time with processing to the ring shape.

Also, in the case of the double structure as shown in FIG. 11(f),different materials may be used for the unit expanded body 114 c and theunit expanded body 114 d.

Also, the surface can be coated by another material after extrusion(FIG. 11(a)), after expansion (FIG. 11(b) or after cutting (FIG. 11(d)).Coating may be a method like dip, deposition, plating and others, forexample. A material for coating can be selected as appropriate accordingto the function of the element to be produced. It can be any of thesemiconductor material, magnetic material, electrically conductivematerial or insulating material. Also, it can be either of the inorganicmaterial or organic material.

If the electrically conductive polymer is used as the expansion materialin this example, the longitudinal direction of the molecular chain isoriented so that it is the right-and-left direction on the drawing whichis the expansion direction. Therefore, after processing to the ringstate, the longitudinal direction of the molecular chain is oriented inthe circumferential direction as shown in FIG. 11(g). Thus, electronsare easy to hop in the radial direction.

Also, when processed in the ring state, if an opening 115 is provided,this opening can be used as a discharge port of electrodes or the like,for example. It can also be a connection part between line elements whenan integrated device is made by weaving the line elements. Also, it canbe used as a junction surface with another area.

After processed into the ring state or the like, the linear body havingthis ring shape or the like can be used as an intermediate body forcompleting the line element having the desired cross-sectional area.

As shown in FIG. 11(h), a constricted portion (a portion whose outerdiameter geometry of the cross section is different from the otherportions) 117 may be provided periodically or non-periodically at anappropriate position of the linear body in the longitudinal direction.When another line element is woven perpendicularly to the longitudinaldirection, this constricted portion can be used as a mark forpositioning. Such formation of the constricted portion can be appliednot only to this example but to other line elements.

It is preferable to set the orientation rate of the molecular chain inthe circumferential direction to 50% or more. It is more preferable toset it to 70% or more. By this, the line element with more excellentcharacteristics can be obtained.

EXAMPLE 13

In FIG. 12, a manufacture example of the element with the crosssectional shape formed intermittently is described in the above example,but in this example, another manufacture example in the case ofextrusion is shown.

In FIG. 12, only a part of areas forming the circuit element is shown.

FIG. 12(a) shows injection of the semiconductor material only at atiming shown by a at injection of the semiconductor material. It may beso constituted that the conductor material is injected continuously,while the semiconductor material is injected intermittently to form theconductor and the semiconductor at the same time. Also, the conductorportion may be formed in the first and then, the semiconductor materialis injected intermittently around the conductor while the conductor ismade to run.

In an example shown in FIG. 12(b), the line-state semiconductor orinsulator is formed in the first and then, coating is implemented byintermittent deposition or the like of an electric conductor in thelongitudinal direction so as to provide a portion having a differentcross-sectional area in the longitudinal direction.

In an example shown in FIG. 12(c), first, an organic material is formedin the line state. Then, light is irradiated intermittently in thelongitudinal direction so that photo polymerization is generated at theirradiated portion.

By this, a portion having a different cross-sectional area can be formedin the longitudinal direction.

In FIG. 12(d), α is a light-transmitting electrically conductive polymerand β is an intermediate linear body formed by integral extrusion of twolayers made of a photo-hardening electrically conductive polymer. Whenlight is irradiated intermittently while this intermediate linear bodyis running, light hardening occurs at a portion. By this, a portionhaving a different cross-sectional area in the longitudinal directioncan be formed.

FIG. 12(e) is an example in which ion irradiation is used. The linearbody is made to run, and an irradiating device is provided in themiddle. Ion is intermittently irradiated by ion irradiation. Ion may beirradiated from all the directions or only from a predetermineddirection. It can be decided as appropriate according to across-sectional area to be formed. Also, the ion irradiation distancemay be determined as appropriate.

A heating device is provided on the downstream side of the ionirradiating device for heating the linear body after ion irradiation. Anion-irradiated portion becomes another composition by heating.

In the case of irradiation from all the directions, all the surfacesbecome another composition. Also, in the case of ion irradiation onlyfrom a predetermine direction, only that portion becomes anothercomposition.

FIG. 12(f) shows an example in which the intermediate linear body to beirradiated by ion is a single-layer structure, but it is possible toimplant ion only inside by controlling the irradiation distance at ionirradiation, even when it is a double-layer structure. Anothercomposition can be formed in the irradiated inside by thermalprocessing.

If a silicon linear element is used as the intermediate linear body andO ion is implanted, a SiO₂ area can be formed. By controlling theirradiation distance, a so-called BOX (embedded oxide film) can beformed. BOX was described as the case of intermittent formation ofanother cross-sectional area, but the BOX can be formed over the entirearea in the longitudinal direction.

EXAMPLE 14

This example is an example to form an integrated circuit by weaving aplurality of line elements.

FIG. 13 shows an example of an integrated circuit.

The integrated circuit shown in FIG. 13 is a DRAM type semiconductormemory. The DARM memory is comprised of memory cells arrangedhorizontally and vertically, and its circuit is shown in FIG. 13(a).

One cell is made of a MOSFET 209 a 1 and a condenser 207. Each of thecells has conductors of bit lines S1, S2 . . . and word lines G1, G2 . .. connected.

As shown in FIG. 13(b), this cell is comprised by the MOSFET lineelement 209 a 1 and the condenser line element 207. The MOSFET lineelements are prepared for the number of rows.

In this MOSFET 209 a 1, a gate electrode 201, an insulating layer 202, asource/drain 204, 205 and a semiconductor layer 203 are formedsequentially from the center to the outer circumference.

In the longitudinal direction, an element separation area 210 is formed.However, the gate electrode 201 penetrates a single linear body. Thatis, as one gate electrode as a common word line, a plurality of MOSFET209 a 1, 209 b 1 . . . are formed in the longitudinal direction in onelinear body.

Also, MOSFET 209 a 2, a3 . . . of FIG. 13(a) are constituted similarlyby line elements.

It is preferable to constitute this MOSFET line element by a polymermaterial.

Also, a discharge part of the source area 204 is projected in the radialdirection as shown in FIG. 13(c). That is for making it easer to contactthe bit line S1. Also, as shown in FIG. 13(d), the drain area 205 isalso projected in the radial direction. This projecting position isdisplaced between drain and source in the longitudinal direction.

In the meantime, for the condenser line element 207, an electrode, aninsulating layer and an electrode are sequentially formed from thecenter to the outside.

S1 is a bit line and is formed in the line state. As a material, it ispreferable to use an electrically conductive polymer. By winding thisbit line S1206 around the source portion 204 to have contact with thesource 204. This bit line S1 is wound around the source area of the lineMOSFET element constituting MOSFET 209 a 2, a3 . . . respectively.

Also, the drain area 205 is connected to the condenser 207 with a linearelectrically conductive polymer 210.

In the example shown in FIG. 13, the condenser is made as another lineelement, but it can be provided at an appropriate position of the linearbody in which MOSFET is formed. By that, the number of used lineelements is reduced, whereby integration can be further improved. Also,it is possible to directly join the condenser to the MOSFET line elementusing an electrically conductive adhesive or the like instead ofconnection with the electrically conductive polymer 210.

After the line element is woven horizontally and vertically as above,the entire surface is coated by an insulating material to preventleakage of the conductive portion.

A diode may be used in place of the condenser.

EXAMPLE 15

This example shows an integrated circuit formed by bundling a pluralityof line elements.

In this example, too, an example to use MOSFET line element is shown. Itis needless to say that another line element can be used.

A plurality of MOSFET line elements are prepared.

A signal input element is formed on an end face of each of the lineelements so that various information can be sensed by bundling them. Ifa light sensor, ion sensor, pressure sensor, etc. are provided, forexample, information corresponding to five senses of a human can besensed.

For example, if a sensor corresponding to 100 types of signal is to beformed by a conventional board-type semiconductor integrated circuit, aphotolithographic process should be repeated 100 times for production.However, if the end face of the line element is used, such repetition ofthe photolithographic process is not needed but a sensor correspondingto 100 types of signal can be made easily without repeating thephotolithographic process. Also, a high-density sensor can be obtained.

EXAMPLE 16

Application as a photoelectromotive force integrated device is possibleas mentioned below.

The photoelectromotive force device can be formed by bundling, twistingor weaving the line element having the pin structure. It is preferableto constitute the pin layer by an electrically conductive polymer. Also,it is preferable to add a sensitizer.

For example, a fabric can be made by weaving the line element, and thisfabric can be made into clothes. In this case, the line element as awhole becomes a light receiving area, and incident light can be receivedfrom an angle of 360°. Not only that, light can be receivedthree-dimensionally, by which a photoelectromotive force element withexcellent light receiving efficiency can be obtained.

Also, efficiency to take in light is extremely high. That is, lightwhich was not inputted to the line element but reflected is inputted toanother line element since it is taken into the fabric and reflectedrepeatedly. The above line element is preferably formed by extrusion.

It is only necessary to connect electrodes from each of the elements toa collecting electrode and to provide a connection terminal at thiscollecting electrode.

Also, by incorporating a battery in the lining of the clothes,electricity can be used in a dark place, too.

Also, by providing a heating element in the clothes, clothes havingheating effect can be gained.

Moreover, by coating the line heating element with the insulating layerand weaving it in the fabric state with the line-statephotoelectromotive force element, clothes with heating effect can beproduced.

Also, the line element can be implanted in a board in the desired shapeto have a solar battery. That is, by implanting the line element in thefluffy or erinaceous state, a solar battery with extremely high lighttaking-in efficiency can be obtained.

For a communication satellite, reduction of the entire weight isdesired. The above solar cell is so light-weight that it is effective asa generating device in the communication satellite.

As it has flexibility, it can be formed along a desired shape and can beapplied to the outer surface of the communication satellite using anadhesive.

By easily implanting the line-state photoelectromotive force element onthe surface of a board conforming to the shape of a human head, anartificial wig having a power generating function can be obtained.

Also, when using a superfine line element, it can realize a leather-likesurface having suede effect. Such a line element can be made into a bag.That is, a bag having a power generating function is achieved.

EXAMPLE 17

FIG. 14 shows another example.

In this example, the line-state source electrode and the drain electrodeare made into contact with an appropriate position of a linear body inwhich a gate electrode is coated by an insulating layer. An organicsemiconductor material is applied to a range across the contact portionof the source electrode and the contact portion of the drain electrode.

Also, as shown in FIG. 15, the line-state source electrode or drainelectrode may be wound once or several times around the linear body inwhich the gate electrode is coated by the insulating layer. By winding,sufficient contact can be secured. By providing a constricted portion onthe linear body, it is convenient to position winding or the like.

As shown in FIG. 16, the source electrode/drain electrode can be broughtinto contact only with an appropriate linear body (A point). Or, thesource/drain electrodes can be connected to each other with stillanother conductor (B point).

In FIG. 16, an example of a single row is shown but arrangement inplural rows is also possible. In this case, it is only necessary to havethree-dimensional connection. Since the linear body, source electrodeand drain electrode have flexibility, they can be bent in a desireddirection at a desired position.

If MOSFET line element is used as a linear body, for example, andconnected to each other three-dimensionally at a desired position, adesired logical circuit can be assembled. When a conventionalsemiconductor board is used for basic constitution, it can not beavoidable that a current channel becomes longer, but if the line elementis used, the current channel can be extremely short, whereby anextremely high-speed logical circuit can be constituted.

INDUSTRIAL APPLICABILITY

An integrated device which is not limited by shape but has plasticity orflexibility and is capable of forming various devices in any shape canbe provided.

1. An integrated device characterized by that a plurality of lineelements in which a circuit element is formed continuously orintermittently in the longitudinal direction are bundled.
 2. Anintegrated device characterized by that a plurality of line elements inwhich a circuit element is formed continuously or intermittently in thelongitudinal direction are twisted.
 3. An integrated devicecharacterized by that a plurality of line elements in which a circuitelement is formed continuously or intermittently in the longitudinaldirection are woven or knitted.
 4. An integrated device characterized bythat a plurality of line elements in which a circuit element is formedcontinuously or intermittently in the longitudinal direction are joined.5. An integrated device characterized by that a plurality of lineelements in which a circuit element is formed continuously orintermittently in the longitudinal direction are formed in combination.6. An integrated device characterized by that a line element in which acircuit element is formed continuously or intermittently in thelongitudinal direction are formed in the non-woven state.
 7. A fabricbody formed by weaving or knitting a plurality of line elements in whicha circuit element is formed continuously or intermittently in thelongitudinal direction.
 8. Clothes characterized by being produced byweaving or knitting a plurality of line elements in which a circuitelement is formed continuously or intermittently in the longitudinaldirection.
 9. An integrated device characterized by that a plurality ofline elements in which a cross section having a plurality of areasforming a circuit is formed continuously or intermittently in thelongitudinal direction are bundled.
 10. An integrated devicecharacterized by that a plurality of line elements in which a crosssection having a plurality of areas forming a circuit is formedcontinuously or intermittently in the longitudinal direction aretwisted.
 11. An integrated device characterized by that a plurality ofline elements in which a cross section having a plurality of areasforming a circuit is formed continuously or intermittently in thelongitudinal direction are woven or knitted.
 12. An integrated devicecharacterized by that a plurality of line elements in which a crosssection having a plurality of areas forming a circuit is formedcontinuously or intermittently in the longitudinal direction are joined.13. An integrated device characterized by that a plurality of lineelements in which a cross section having a plurality of areas forming acircuit is formed continuously or intermittently in the longitudinaldirection are formed in combination.
 14. An integrated circuitcharacterized by that a line element in which a cross section having aplurality of areas forming a circuit is formed continuously orintermittently in the longitudinal direction are formed in the non-wovenstate.
 15. A fabric body formed by weaving or knitting a plurality ofline elements in which a cross section having a plurality of areasforming a circuit is formed continuously or intermittently in thelongitudinal direction.
 16. Clothes characterized by being produced byweaving or knitting a plurality of line elements in which a crosssection having a plurality of areas forming a circuit is formedcontinuously or intermittently in the longitudinal direction.